On Jan. 30, 2011, WIMNACT #31 (Workshop and IEEE EDS Mini-colloquium on NAnometer CMOS Technology) was held at Tokyo Institute of Technology, Yokohama, gathering about 40 attendees. Followings are speakers and the LINK to their presentation foils.

1) S. Kimura, Hitachi, Chair, EDS Japan Chapter,

Title: Opening remarks and report of EDS Japan Chapter Activity

2) Paul Yu, UC San Diego, EDS President

Title: Introduction of EDS

3) Lecture by Paul Yu, UC San Diego, EDS President, DL,

Title: A Green Campus and PV Research

4) Lecture by Ru Huang, Peking Univ. EDS AdCom member

Title: Gate-all-around Si Nanowire Transistors(SNWTs) for Extreme Scaling: Fabrication, Characterization and Analysis

5) Lecture by Kenji Shiraishi, Tsukuba Univ. EDS DL

Title: Computational Science Studies toward Future Nano-Devices

6) Lecture by Akira Toriumi, U. of Tokyo, Vice Chair, EDS Japan Chapter

Title: Thermally oxidized SiO₂ formation on 4H-SiC substrate by considering the interface reaction kinetics

7) Lecture by Tohru Mogami, NEC

Title: CMOS Scaling and Variability

8) Lecture by Masahara, AIST

Title: Advanced FinFET Process Technology

9) Lecture and Closing by Hiroshi Iwai, EDS DL

Title: Future of Nano-CMOS Technology